Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.831582
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dc.titleN-type Schottky barrier source/drain MOSFET using Ytterbium silicide
dc.contributor.authorZhu, S.
dc.contributor.authorChen, J.
dc.contributor.authorLi, M.-F.
dc.contributor.authorLee, S.J.
dc.contributor.authorSingh, J.
dc.contributor.authorZhu, C.X.
dc.contributor.authorDu, A.
dc.contributor.authorTung, C.H.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:33:31Z
dc.date.available2014-10-07T04:33:31Z
dc.date.issued2004-08
dc.identifier.citationZhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L. (2004-08). N-type Schottky barrier source/drain MOSFET using Ytterbium silicide. IEEE Electron Device Letters 25 (8) : 565-567. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.831582
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82789
dc.description.abstractYtterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.831582
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.831582
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue8
dc.description.page565-567
dc.description.codenEDLED
dc.identifier.isiut000222905100017
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