Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000716
DC FieldValue
dc.titleNovel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
dc.contributor.authorWong, H.-S.
dc.contributor.authorLiu, F.-Y.
dc.contributor.authorAng, K.-W.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:29Z
dc.date.available2014-10-07T04:33:29Z
dc.date.issued2008-08
dc.identifier.citationWong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C. (2008-08). Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors. IEEE Electron Device Letters 29 (8) : 841-844. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000716
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82786
dc.description.abstractWe explore a novel silicide contact technology for effective Schottky barrier height ΦBn and contact resistance reduction, which is compatible with an advanced silicon-carbon (Si1 -xCx) source/drain (S/D) stressor technology. The new silicide contact technology incorporates selenium (Se) that is coimplanted with S/D dopants into the silicon-carbon S/D prior to nickel silicidation, leading to the segregation of Se at the NiSi:C/n-Si0.99C0.01 interface and the achievement of excellent ohmic contact characteristics. We demonstrate that the Se-coimplantation process contributes to a 23% drive current enhancement in a strained silicon-on-insulator n-MOSFET. The enhancement is attributed to the decrease of external series resistance which is primarily due to the reduction of silicide contact resistance. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2000716
dc.sourceScopus
dc.subjectOhmic contact
dc.subjectSchottky barrier height
dc.subjectSelenium (Se) segregation
dc.subjectSilicon-carbon source/drain (S/D) stressor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2000716
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue8
dc.description.page841-844
dc.description.codenEDLED
dc.identifier.isiut000258096000007
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