Please use this identifier to cite or link to this item: https://doi.org/10.1002/chem.201100807
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dc.titleNonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units
dc.contributor.authorZhang, B.
dc.contributor.authorLiu, Y.-L.
dc.contributor.authorChen, Y.
dc.contributor.authorNeoh, K.-G.
dc.contributor.authorLi, Y.-X.
dc.contributor.authorZhu, C.-X.
dc.contributor.authorTok, E.-S.
dc.contributor.authorKang, E.-T.
dc.date.accessioned2014-10-07T04:33:26Z
dc.date.available2014-10-07T04:33:26Z
dc.date.issued2011-09-05
dc.identifier.citationZhang, B., Liu, Y.-L., Chen, Y., Neoh, K.-G., Li, Y.-X., Zhu, C.-X., Tok, E.-S., Kang, E.-T. (2011-09-05). Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units. Chemistry - A European Journal 17 (37) : 10304-10311. ScholarBank@NUS Repository. https://doi.org/10.1002/chem.201100807
dc.identifier.issn09476539
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82781
dc.description.abstractA new polymer, poly[{9,9-di(triphenylamine)fluorene}(9,9-dihexylfluorene) (4-aminophenylcarbazole)] (PFCz) was synthesized and used in a reaction with graphene oxide (GO) containing surface-bonded acyl chloride moieties to give a soluble GO-based polymer material GO-PFCz. A bistable electrical switching effect was observed in an electronic device in which the GO-PFCz film was sandwiched between indium-tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 108 read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. The mechanism associated with the memory effects was elucidated from molecular simulation results and in-situ photoluminescence spectra of the GO-PFCz film under different electrical biases. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/chem.201100807
dc.sourceScopus
dc.subjectgraphene oxide
dc.subjectmolecular devices
dc.subjectpolyfluorene
dc.subjectpolymers
dc.subjectrewritable memory
dc.typeArticle
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/chem.201100807
dc.description.sourcetitleChemistry - A European Journal
dc.description.volume17
dc.description.issue37
dc.description.page10304-10311
dc.description.codenCEUJE
dc.identifier.isiut000295457700015
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