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|Title:||Nonvolatile resistive switching in graphene oxide thin films||Authors:||He, C.L.
|Issue Date:||2009||Citation:||He, C.L., Zhuge, F., Zhou, X.F., Li, M., Zhou, G.C., Liu, Y.W., Wang, J.Z., Chen, B., Su, W.J., Liu, Z.P., Wu, Y.H., Cui, P., Li, R.-W. (2009). Nonvolatile resistive switching in graphene oxide thin films. Applied Physics Letters 95 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3271177||Abstract:||Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 104 s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications. © 2009 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82779||ISSN:||00036951||DOI:||10.1063/1.3271177|
|Appears in Collections:||Staff Publications|
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