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https://doi.org/10.1021/la061504z
DC Field | Value | |
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dc.title | Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60 | |
dc.contributor.author | Ling, Q.-D. | |
dc.contributor.author | Lim, S.-L. | |
dc.contributor.author | Song, Y. | |
dc.contributor.author | Zhu, C.-X. | |
dc.contributor.author | Chan, D.S.-H. | |
dc.contributor.author | Kang, E.-T. | |
dc.contributor.author | Neoh, K.-G. | |
dc.date.accessioned | 2014-10-07T04:33:23Z | |
dc.date.available | 2014-10-07T04:33:23Z | |
dc.date.issued | 2007-01-02 | |
dc.identifier.citation | Ling, Q.-D., Lim, S.-L., Song, Y., Zhu, C.-X., Chan, D.S.-H., Kang, E.-T., Neoh, K.-G. (2007-01-02). Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60. Langmuir 23 (1) : 312-319. ScholarBank@NUS Repository. https://doi.org/10.1021/la061504z | |
dc.identifier.issn | 07437463 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82778 | |
dc.description.abstract | A functional polymer (PVK-C60), containing carbazole moieties and fullerene moieties in a molar ratio of about 100:1, was synthesized by covalent tethering of C60 to poly(N-vinylcarbazole) (PVK). The molecular structure and composition of PVK-C60 were characterized by FTIR, Raman, and UV-vis absorption spectroscopy, gel permeation chromatography (GPC), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CyV). It was observed that the C60-modified PVK exhibited an enhanced glass-transition temperature and good solubility in organic solvents such as toluene, tetrahydrofuran, chloroform, and N,N-dimethylformamide (DMF). The polymer memory exhibited an ON/OFF current ratio of more than 105 and write/erase voltages around -2.8 V/+3.0V. Both the ON and OFF states were stable under a constant voltage stress of -1 V for 12 h and survived up to 108 read cycles at -1 under ambient conditions. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/la061504z | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | CHEMICAL & BIOMOLECULAR ENGINEERING | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1021/la061504z | |
dc.description.sourcetitle | Langmuir | |
dc.description.volume | 23 | |
dc.description.issue | 1 | |
dc.description.page | 312-319 | |
dc.description.coden | LANGD | |
dc.identifier.isiut | 000243086600046 | |
Appears in Collections: | Staff Publications |
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