1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555708
DC FieldValue
dc.titleNitride-mediated epitaxy of CoSi2 on Si(001)
dc.contributor.authorChong, R.K.K.
dc.contributor.authorYeadon, M.
dc.contributor.authorChoi, W.K.
dc.contributor.authorStach, E.A.
dc.contributor.authorBoothroyd, C.B.
dc.date.accessioned2014-10-07T04:33:14Z
dc.date.available2014-10-07T04:33:14Z
dc.date.issued2003-03-24
dc.identifier.citationChong, R.K.K., Yeadon, M., Choi, W.K., Stach, E.A., Boothroyd, C.B. (2003-03-24). Nitride-mediated epitaxy of CoSi2 on Si(001). Applied Physics Letters 82 (12) : 1833-1835. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555708
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82765
dc.description.abstractA study was performed on nitride-mediated epitaxy of CoSi2 on Si (001). An ultrathin layer of silicon nitride was formed by exposure to ammonia gas at 900 °C, followed by the deposition of a layer of Co at room temperature. It was found that CoSi2 islands were elongated along the in-plane Si(110) directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si(100) at elevated temperature and low deposition rates.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1555708
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1555708
dc.description.sourcetitleApplied Physics Letters
dc.description.volume82
dc.description.issue12
dc.description.page1833-1835
dc.description.codenAPPLA
dc.identifier.isiut000181666500009
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

36
checked on Mar 31, 2023

WEB OF SCIENCETM
Citations

30
checked on Mar 22, 2023

Page view(s)

211
checked on Mar 30, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.