Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1555708
DC Field | Value | |
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dc.title | Nitride-mediated epitaxy of CoSi2 on Si(001) | |
dc.contributor.author | Chong, R.K.K. | |
dc.contributor.author | Yeadon, M. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Stach, E.A. | |
dc.contributor.author | Boothroyd, C.B. | |
dc.date.accessioned | 2014-10-07T04:33:14Z | |
dc.date.available | 2014-10-07T04:33:14Z | |
dc.date.issued | 2003-03-24 | |
dc.identifier.citation | Chong, R.K.K., Yeadon, M., Choi, W.K., Stach, E.A., Boothroyd, C.B. (2003-03-24). Nitride-mediated epitaxy of CoSi2 on Si(001). Applied Physics Letters 82 (12) : 1833-1835. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555708 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82765 | |
dc.description.abstract | A study was performed on nitride-mediated epitaxy of CoSi2 on Si (001). An ultrathin layer of silicon nitride was formed by exposure to ammonia gas at 900 °C, followed by the deposition of a layer of Co at room temperature. It was found that CoSi2 islands were elongated along the in-plane Si(110) directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si(100) at elevated temperature and low deposition rates. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1555708 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.description.doi | 10.1063/1.1555708 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 82 | |
dc.description.issue | 12 | |
dc.description.page | 1833-1835 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000181666500009 | |
Appears in Collections: | Staff Publications |
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