Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.910793
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dc.titleNickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
dc.contributor.authorLee, R.T.P.
dc.contributor.authorYang, L.-T.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorAng, K.-W.
dc.contributor.authorLai, D.M.Y.
dc.contributor.authorHoe, K.M.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorChi, D.Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:13Z
dc.date.available2014-10-07T04:33:13Z
dc.date.issued2008-01
dc.identifier.citationLee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2008-01). Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain. IEEE Electron Device Letters 29 (1) : 89-92. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910793
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82763
dc.description.abstractTo explore the potential of nickel-silicide:carbon (NiSi:C) as contact technology for MOSFETs with silicon-carbon (Si:C) source/drain (S/D) regions, we examined the effects of incorporating 1.0 at.% of carbon in Si prior to nickel silicidation. The addition of carbon was found to improve the morphological and phase stability of NiSi:C contacts. This is possibly due to the presence of carbon at the NiSi:C grain boundaries and NiSi:C/Si interface, which will modify the grain-boundary and interfacial energies. This will influence the kinetics of NiSi:C silicidation. In this letter, we have also demonstrated the first integration of NiSi:C contacts in MOSFETs with Si:C S/D regions. We further show that NiSi:C silicidation suppresses the formation of active deep-level defects, leading to superior n+/p junction characteristics. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.910793
dc.sourceScopus
dc.subjectFin field-effect-transistor (FinFET)
dc.subjectMultiple-gate transistor
dc.subjectNickel silicide (NiSi)
dc.subjectSilicide
dc.subjectSilicon-carbon (Si:C)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.910793
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue1
dc.description.page89-92
dc.description.codenEDLED
dc.identifier.isiut000252098100027
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