Please use this identifier to cite or link to this item: https://doi.org/10.1143/APEX.5.116502
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dc.titleN-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
dc.contributor.authorIvana
dc.contributor.authorSubramanian, S.
dc.contributor.authorOwen, M.H.S.
dc.contributor.authorTan, K.H.
dc.contributor.authorLoke, W.K.
dc.contributor.authorWicaksono, S.
dc.contributor.authorYoon, S.F.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:02Z
dc.date.available2014-10-07T04:33:02Z
dc.date.issued2012-11
dc.identifier.citationIvana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2012-11). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. Applied Physics Express 5 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.116502
dc.identifier.issn18820778
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82748
dc.description.abstractInGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni-InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm · tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In 0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. © 2012 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/APEX.5.116502
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/APEX.5.116502
dc.description.sourcetitleApplied Physics Express
dc.description.volume5
dc.description.issue11
dc.description.page-
dc.identifier.isiut000310867800032
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