N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

Abstract

We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi1.8). A low-temperature silicidation process was developed for the formation of the low electron barrier height YbSi1.8 phase, without reaction with SiO2 isolation or SiN spacer materials, enabling integration in a CMOS fabrication process flow. The fabricated device exhibits good device characteristics with a drive current of 241 μA/μ VDS = VGS Vt = 1 V, Ion/Ioff = 104 at VDS =1.1 subthreshold swing of 125 mV/ decade, and drain-induced barrier lowering of 0.26 V/V. © 2007 IEEE.