Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.908495
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dc.titleN-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorTung, C.-H.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:00Z
dc.date.available2014-10-07T04:33:00Z
dc.date.issued2007-11
dc.identifier.citationLiow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2007-11). N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer. IEEE Electron Device Letters 28 (11) : 1014-1017. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.908495
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82746
dc.description.abstractThe performance of n-channel (110)-sidewall trigate fin-shaped field-effect transistors (FinFETs) is seriously compromised as (110) surfaces have significantly lower electron mobility than (100) surfaces. Straining the channel in (110)-sidewall FinFETs using lattice-mismatched silicon-carbon (Si1-yCy) stressors alone was experimentally determined to be far less effective than doing the same with (100)-sidewall FinFETs. By additionally incorporating a tensile silicon nitride contact etch-stop layer, the increase in longitudinal tensile stress and the introduction of vertical compressive stress result in significant further IDsat enhancement, highlighting the importance of the vertical compressive stress component for enhancing (110)-sidewall FinFET performance. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.908495
dc.sourceScopus
dc.subjectEtch-stop layer (ESL)
dc.subjectFin-shaped field-effect transistor (FinFET)
dc.subjectMultiple-gate transistor
dc.subjectSilicon-carbon (SiC)
dc.subjectStrain
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.908495
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue11
dc.description.page1014-1017
dc.description.codenEDLED
dc.identifier.isiut000250524200025
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