NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

Abstract

Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress ∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift Δ Vth) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition Vstress. Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at VG = -0.99 V using Eox power law lifetime extrapolation model or at VG = -0.76 using the exponential Vstress model. © 2009 IEEE.