Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2024332
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dc.titleNBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress
dc.contributor.authorLiu, B.
dc.contributor.authorTan, K.-M.
dc.contributor.authorYang, M.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:00Z
dc.date.available2014-10-07T04:33:00Z
dc.date.issued2009
dc.identifier.citationLiu, B., Tan, K.-M., Yang, M., Yeo, Y.-C. (2009). NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress. IEEE Electron Device Letters 30 (8) : 867-869. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024332
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82745
dc.description.abstractNegative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress ∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift Δ Vth) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition Vstress. Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at VG = -0.99 V using Eox power law lifetime extrapolation model or at VG = -0.76 using the exponential Vstress model. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2024332
dc.sourceScopus
dc.subjectDiamond-like carbon (DLC)
dc.subjectReliability
dc.subjectStrain
dc.subjectTransistor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2024332
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue8
dc.description.page867-869
dc.description.codenEDLED
dc.identifier.isiut000268342400026
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