Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/82743
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dc.titleNanostructure formation on amorphous WO3 thin films in air by scanning tunneling microscopy
dc.contributor.authorQiu, H.
dc.contributor.authorLu, Y.-F.
dc.contributor.authorMai, Z.-H.
dc.date.accessioned2014-10-07T04:32:58Z
dc.date.available2014-10-07T04:32:58Z
dc.date.issued2001-01
dc.identifier.citationQiu, H.,Lu, Y.-F.,Mai, Z.-H. (2001-01). Nanostructure formation on amorphous WO3 thin films in air by scanning tunneling microscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (1) : 290-294. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82743
dc.description.abstractScanning tunnelling microscope (STM) modifications on α-WO3-x thin films were carried out in air. Holes and bumps were produced. Two mechanisms were clarified with respect to the water layer attached more or less in modifications. By applying voltage pulses, the high humidity (>60%) raised the probability of hole formations. Connection lines were formed between the holes, confirming a dominant electrochemical nature. The low humidity (
dc.sourceScopus
dc.subjectBump
dc.subjectElectric field gradient
dc.subjectElectrochemistry
dc.subjectHole
dc.subjectHumidity
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume40
dc.description.issue1
dc.description.page290-294
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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