Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3672448
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dc.titleMulti-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
dc.contributor.authorGyanathan, A.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:32:49Z
dc.date.available2014-10-07T04:32:49Z
dc.date.issued2011-12-15
dc.identifier.citationGyanathan, A., Yeo, Y.-C. (2011-12-15). Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer. Journal of Applied Physics 110 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3672448
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82729
dc.description.abstractThis work investigates multi-level phase change random access memory (PCRAM) devices comprising two Ge 2Sb 2Te 5 (GST) layers sandwiching a thermal insulating Ta 2O 5 barrier layer. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogen doped GST (NGST) layer on a thin Ta 2O 5 barrier layer on an undoped GST layer. It is demonstrated that one of the phase change layers in the GST stack can be selectively amorphized by using a voltage pulse. This enables multi-level resistance switching. The differences in resistivities, as well as the different melting and crystallization temperatures of both the NGST and GST layers, contribute to the multi-level switching dynamics of the PCRAM device. The thermal conductivity of Ta 2O 5 with respect to GST is also another factor influencing the multi-level switching. Extensive electrical characterization of the PCRAM devices was performed. Thermal analysis was used to examine the physics behind the multi-level switching mechanism of these devices. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3672448
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3672448
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume110
dc.description.issue12
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000298639800135
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