Please use this identifier to cite or link to this item:
https://doi.org/10.1143/JJAP.51.02BD08
DC Field | Value | |
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dc.title | Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers | |
dc.contributor.author | Gyanathan, A. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:32:48Z | |
dc.date.available | 2014-10-07T04:32:48Z | |
dc.date.issued | 2012-02 | |
dc.identifier.citation | Gyanathan, A., Yeo, Y.-C. (2012-02). Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BD08 | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82728 | |
dc.description.abstract | This work compares the effects of SiN and Ta 2O 5 barrier layers in a multi-level phase change random access memory (PCRAM) cell. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogendoped Ge 2Sb 2Te 5 (NGST) layer on top of a thin barrier layer on an undoped GST layer. The thermal conductivity and electrical resistivity of the barrier layer affect multi-level switching performance in terms of endurance as well as power consumption. Extensive electrical characterization was performed on these PCRAM multi-level devices. Thermal analysis was also performed to investigate the thermal efficiency of each barrier layer. It was observed that for a constant barrier layer thickness of 1.5 nm, the endurance of the multi-level device with the SiN barrier layer was better than that with the Ta 2O 5 barrier layer; however, the multi-level device with the Ta 2O 5 barrier layer had a lower power consumption than that with the SiN barrier layer. © 2012 The Japan Society of Applied Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.51.02BD08 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1143/JJAP.51.02BD08 | |
dc.description.sourcetitle | Japanese Journal of Applied Physics | |
dc.description.volume | 51 | |
dc.description.issue | 2 PART 2 | |
dc.description.page | - | |
dc.identifier.isiut | 000303481400030 | |
Appears in Collections: | Staff Publications |
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