Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BD08
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dc.titleMulti-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers
dc.contributor.authorGyanathan, A.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:32:48Z
dc.date.available2014-10-07T04:32:48Z
dc.date.issued2012-02
dc.identifier.citationGyanathan, A., Yeo, Y.-C. (2012-02). Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BD08
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82728
dc.description.abstractThis work compares the effects of SiN and Ta 2O 5 barrier layers in a multi-level phase change random access memory (PCRAM) cell. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogendoped Ge 2Sb 2Te 5 (NGST) layer on top of a thin barrier layer on an undoped GST layer. The thermal conductivity and electrical resistivity of the barrier layer affect multi-level switching performance in terms of endurance as well as power consumption. Extensive electrical characterization was performed on these PCRAM multi-level devices. Thermal analysis was also performed to investigate the thermal efficiency of each barrier layer. It was observed that for a constant barrier layer thickness of 1.5 nm, the endurance of the multi-level device with the SiN barrier layer was better than that with the Ta 2O 5 barrier layer; however, the multi-level device with the Ta 2O 5 barrier layer had a lower power consumption than that with the SiN barrier layer. © 2012 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.51.02BD08
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.51.02BD08
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume51
dc.description.issue2 PART 2
dc.description.page-
dc.identifier.isiut000303481400030
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