Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.834246
DC FieldValue
dc.titleMOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:32:45Z
dc.date.available2014-10-07T04:32:45Z
dc.date.issued2004-09
dc.identifier.citationPark, C.S., Cho, B.J., Kwong, D.-L. (2004-09). MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2. IEEE Electron Device Letters 25 (9) : 619-621. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.834246
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82723
dc.description.abstractWe demonstrate a top-surface aluminized and nitrided HfO2 gate dielectric using a synthesis of ultrathin aluminum nitride (AlN) and HfO2. The reaction of AlN with HfO2 through a subsequent high-temperature annealing incorporates Al and N into an HfO2 layer, which results in a synthesis of HfAlON near the top surface of HfO2, forming an HfAlON-HfO2 stack structure. This approach suppresses interfacial layer growth and improves thermal stability of the dielectric, resulting in significant improvement in leakage current. It also shows no adverse effects caused by N and Al incorporation at the bottom interface. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.834246
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.834246
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue9
dc.description.page619-621
dc.description.codenEDLED
dc.identifier.isiut000223577600010
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