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https://doi.org/10.1016/j.jcrysgro.2006.11.277
| Title: | Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells | Authors: | Xiang, N. Liu, H.F. Kong, J. Tang, D.Y. Pessa, M. |
Keywords: | A3.Molecular beam epitaxy B2.Semiconducting III-V materials B3.Nonlinear optical devices |
Issue Date: | Apr-2007 | Citation: | Xiang, N., Liu, H.F., Kong, J., Tang, D.Y., Pessa, M. (2007-04). Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 989-992. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.11.277 | Abstract: | We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd0.64Y0.36VO4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW. © 2007. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/82720 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2006.11.277 |
| Appears in Collections: | Staff Publications |
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