Please use this identifier to cite or link to this item:
Title: Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells
Authors: Xiang, N. 
Liu, H.F. 
Kong, J.
Tang, D.Y.
Pessa, M.
Keywords: A3.Molecular beam epitaxy
B2.Semiconducting III-V materials
B3.Nonlinear optical devices
Issue Date: Apr-2007
Citation: Xiang, N., Liu, H.F., Kong, J., Tang, D.Y., Pessa, M. (2007-04). Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 989-992. ScholarBank@NUS Repository.
Abstract: We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd0.64Y0.36VO4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW. © 2007.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.11.277
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Apr 6, 2020


checked on Mar 27, 2020

Page view(s)

checked on Mar 29, 2020

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.