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Title: Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells
Authors: Xiang, N. 
Liu, H.F. 
Kong, J.
Tang, D.Y.
Pessa, M.
Keywords: A3.Molecular beam epitaxy
B2.Semiconducting III-V materials
B3.Nonlinear optical devices
Issue Date: Apr-2007
Citation: Xiang, N., Liu, H.F., Kong, J., Tang, D.Y., Pessa, M. (2007-04). Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 989-992. ScholarBank@NUS Repository.
Abstract: We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd0.64Y0.36VO4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW. © 2007.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2006.11.277
Appears in Collections:Staff Publications

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