Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jcrysgro.2006.11.277
| Title: | Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells | Authors: | Xiang, N. Liu, H.F. Kong, J. Tang, D.Y. Pessa, M. |
Keywords: | A3.Molecular beam epitaxy B2.Semiconducting III-V materials B3.Nonlinear optical devices |
Issue Date: | Apr-2007 | Citation: | Xiang, N., Liu, H.F., Kong, J., Tang, D.Y., Pessa, M. (2007-04). Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells. Journal of Crystal Growth 301-302 (SPEC. ISS.) : 989-992. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2006.11.277 | Abstract: | We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd0.64Y0.36VO4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW. © 2007. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/82720 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2006.11.277 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
2
checked on Sep 26, 2020
WEB OF SCIENCETM
Citations
2
checked on Sep 18, 2020
Page view(s)
77
checked on Sep 27, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.