Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells

Abstract

We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd0.64Y0.36VO4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW. © 2007.