Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000997
DC FieldValue
dc.titleModification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:32:41Z
dc.date.available2014-10-07T04:32:41Z
dc.date.issued2008-08
dc.identifier.citationLim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008-08). Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface. IEEE Electron Device Letters 29 (8) : 848-851. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000997
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82717
dc.description.abstractThis letter demonstrates a way for modifying the effective work function Φm of a molybdenum (Mo) gate electrode by interface dipole engineering in a metal gate/high-κ gate stack. N-type Mo gate Φm (∼4.2 eV) was achieved on a HfLaO gate dielectric even after 950-°C rapid thermal annealing (RTA) due to the presence of a La-induced interface dipole layer. By alloying with ∼14%-19% of aluminum (Al), the effective Mo gate Φm on HfLaO significantly increased by ∼0.6 eV after 950-°C RTA. The incorporation of Al into the HfLaO gate dielectric was evident after the high-temperature anneal. The Φm modulation was attributed to Al-induced interface dipole formation, of which has opposite polarity to the La-induced dipole, at the high-κ/SiO2 interface. This novel concept of employing two opposing interface dipoles in the same metal gate/high-κ stack for Φm tunability would provide insights for future gate stack interface engineering. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2000997
dc.sourceScopus
dc.subjectAl
dc.subjectInterface dipole
dc.subjectLa
dc.subjectMetal gate
dc.subjectMo
dc.subjectWork function modification
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2000997
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue8
dc.description.page848-851
dc.description.codenEDLED
dc.identifier.isiut000258096000009
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

8
checked on Aug 21, 2019

WEB OF SCIENCETM
Citations

9
checked on Aug 21, 2019

Page view(s)

33
checked on Aug 17, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.