Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/28/12/125010
DC FieldValue
dc.titleModelling temperature dependence on AlGaN/GaN power HEMT device characteristics
dc.contributor.authorWang, Y.-H.
dc.contributor.authorLiang, Y.C.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorChang, T.-F.
dc.contributor.authorHuang, C.-F.
dc.contributor.authorYuan, L.
dc.contributor.authorLo, G.-Q.
dc.date.accessioned2014-10-07T04:32:39Z
dc.date.available2014-10-07T04:32:39Z
dc.date.issued2013-12
dc.identifier.citationWang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q. (2013-12). Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics. Semiconductor Science and Technology 28 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/28/12/125010
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82715
dc.description.abstractThis paper reports extensive modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate flat-band Schottky barrier height, energy band Fermi-level (EC-EF) at the AlGaN/GaN interface, two-dimensional electron gas sheet density, gate threshold and (I D-VG) at sub-threshold voltages, and drain current-voltage (ID-VD) characteristics under various high-temperature conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high-temperature operation. © 2013 IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0268-1242/28/12/125010
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume28
dc.description.issue12
dc.description.page-
dc.description.codenSSTEE
dc.identifier.isiut000327467300016
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

23
checked on Oct 15, 2019

WEB OF SCIENCETM
Citations

21
checked on Oct 15, 2019

Page view(s)

98
checked on Oct 12, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.