Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1342026
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dc.titleMicrostructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films
dc.contributor.authorChoi, W.K.
dc.contributor.authorHo, Y.W.
dc.contributor.authorNg, S.P.
dc.contributor.authorNg, V.
dc.date.accessioned2014-10-07T04:32:27Z
dc.date.available2014-10-07T04:32:27Z
dc.date.issued2001-02-15
dc.identifier.citationChoi, W.K., Ho, Y.W., Ng, S.P., Ng, V. (2001-02-15). Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films. Journal of Applied Physics 89 (4) : 2168-2172. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1342026
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82699
dc.description.abstractGe nanocrystal growth in amorphous silicon oxide film was studied using the transmission electron microscopy and x-ray photoelectron spectroscopy techniques. The as-sputtered sample contained mainly GeO2 and Ge suboxides. GeO2 and/or suboxides dissociate when rapid thermal annealed and provide Ge for nanocrystal formation. Nanocrystals of similar size (∼60 Å in diameter) were obtained when annealed at 800̊C. Nanocrystals with diameters of 200-280 Å consisting of multiple twin structures near the Si-SiO2 interface were observed when annealed at 1000°C. The [win structure was attributed to the enhanced diffusion of Ge at 1000°C and the short annealing time. Our photoluminescence (PL) results show that the best PL response was obtained with samples that exhibit uniform nanocrystal size. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1342026
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1342026
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume89
dc.description.issue4
dc.description.page2168-2172
dc.description.codenJAPIA
dc.identifier.isiut000166688300026
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