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|Title:||Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films||Authors:||Choi, W.K.
|Issue Date:||15-Feb-2001||Citation:||Choi, W.K., Ho, Y.W., Ng, S.P., Ng, V. (2001-02-15). Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films. Journal of Applied Physics 89 (4) : 2168-2172. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1342026||Abstract:||Ge nanocrystal growth in amorphous silicon oxide film was studied using the transmission electron microscopy and x-ray photoelectron spectroscopy techniques. The as-sputtered sample contained mainly GeO2 and Ge suboxides. GeO2 and/or suboxides dissociate when rapid thermal annealed and provide Ge for nanocrystal formation. Nanocrystals of similar size (∼60 Å in diameter) were obtained when annealed at 800̊C. Nanocrystals with diameters of 200-280 Å consisting of multiple twin structures near the Si-SiO2 interface were observed when annealed at 1000°C. The [win structure was attributed to the enhanced diffusion of Ge at 1000°C and the short annealing time. Our photoluminescence (PL) results show that the best PL response was obtained with samples that exhibit uniform nanocrystal size. © 2001 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82699||ISSN:||00218979||DOI:||10.1063/1.1342026|
|Appears in Collections:||Staff Publications|
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