Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1361269
Title: Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer
Authors: Wang, Y.J.
Wang, J.P.
Hee, C.H.
Chong, T.C.
Ng, V. 
Issue Date: 1-Jun-2001
Citation: Wang, Y.J., Wang, J.P., Hee, C.H., Chong, T.C., Ng, V. (2001-06-01). Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer. Journal of Applied Physics 89 (11 II) : 6994-6996. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1361269
Abstract: On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2 = 2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j = -3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2 = Ku1 = 1 × 106 erg/cm3 and Ms1 = Ms2 = 400 emu/cm3. Hc follows the equation Hc = -0.755j/Mst1 (j
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82695
ISSN: 00218979
DOI: 10.1063/1.1361269
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