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|Title:||Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer||Authors:||Wang, Y.J.
|Issue Date:||1-Jun-2001||Citation:||Wang, Y.J., Wang, J.P., Hee, C.H., Chong, T.C., Ng, V. (2001-06-01). Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer. Journal of Applied Physics 89 (11 II) : 6994-6996. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1361269||Abstract:||On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2 = 2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j = -3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2 = Ku1 = 1 × 106 erg/cm3 and Ms1 = Ms2 = 400 emu/cm3. Hc follows the equation Hc = -0.755j/Mst1 (j||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82695||ISSN:||00218979||DOI:||10.1063/1.1361269|
|Appears in Collections:||Staff Publications|
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