Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2005.854378
DC Field | Value | |
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dc.title | Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers | |
dc.contributor.author | Kim, S.-J. | |
dc.contributor.author | Cho, B.J. | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Xiong, Y.-Z. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:32:19Z | |
dc.date.available | 2014-10-07T04:32:19Z | |
dc.date.issued | 2005-09 | |
dc.identifier.citation | Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L. (2005-09). Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers. IEEE Electron Device Letters 26 (9) : 625-627. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.854378 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82686 | |
dc.description.abstract | A high capacitance density (Cdensity) metal-insulator-metal MIM) capacitor with niobium pentoxide (Nb2O5) whose κ value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high Cdensity of > 17 fF/μm2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-κ dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process. © 2005 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.854378 | |
dc.source | Scopus | |
dc.subject | Bypass capacitor | |
dc.subject | Decoupling capacitor | |
dc.subject | High-κ dielectric | |
dc.subject | Metal-insulator-metal (MIM) capacitor | |
dc.subject | Niobium oxide (Nb2O5) | |
dc.subject | Radio frequency integrated circuit (RF IC) | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2005.854378 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 26 | |
dc.description.issue | 9 | |
dc.description.page | 625-627 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000231577900009 | |
Appears in Collections: | Staff Publications |
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