Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.107.146802
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dc.titleMetal-insulator transition in SrTiO3-x thin films induced by frozen-out carriers
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorLeusink, D.P.
dc.contributor.authorWang, X.
dc.contributor.authorLü, W.M.
dc.contributor.authorGopinadhan, K.
dc.contributor.authorAnnadi, A.
dc.contributor.authorZhao, Y.L.
dc.contributor.authorHuang, X.H.
dc.contributor.authorZeng, S.W.
dc.contributor.authorHuang, Z.
dc.contributor.authorSrivastava, A.
dc.contributor.authorDhar, S.
dc.contributor.authorVenkatesan, T.
dc.contributor.authorAriando
dc.date.accessioned2014-10-07T04:32:17Z
dc.date.available2014-10-07T04:32:17Z
dc.date.issued2011-09-28
dc.identifier.citationLiu, Z.Q., Leusink, D.P., Wang, X., Lü, W.M., Gopinadhan, K., Annadi, A., Zhao, Y.L., Huang, X.H., Zeng, S.W., Huang, Z., Srivastava, A., Dhar, S., Venkatesan, T., Ariando (2011-09-28). Metal-insulator transition in SrTiO3-x thin films induced by frozen-out carriers. Physical Review Letters 107 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.107.146802
dc.identifier.issn00319007
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82684
dc.description.abstractWe report optical, electrical and magnetotransport properties of oxygen deficient SrTiO3 (SrTiO3-x) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (Ovac) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO3-x, it was found that Ovac in bulk SrTiO3-x is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO3-x film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field. © 2011 American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevLett.107.146802
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1103/PhysRevLett.107.146802
dc.description.sourcetitlePhysical Review Letters
dc.description.volume107
dc.description.issue14
dc.description.page-
dc.description.codenPRLTA
dc.identifier.isiut000295328200010
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