Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2108634
DC FieldValue
dc.titleMechanism of stress memorization technique (SMT) and method to maximize its effect
dc.contributor.authorPandey, S.M.
dc.contributor.authorLiu, J.
dc.contributor.authorHooi, Z.S.
dc.contributor.authorFlachowsky, S.
dc.contributor.authorHerrmann, T.
dc.contributor.authorTao, W.
dc.contributor.authorBenistant, F.
dc.contributor.authorSee, A.
dc.contributor.authorChu, S.
dc.contributor.authorSamudra, G.S.
dc.date.accessioned2014-10-07T04:32:10Z
dc.date.available2014-10-07T04:32:10Z
dc.date.issued2011-04
dc.identifier.citationPandey, S.M., Liu, J., Hooi, Z.S., Flachowsky, S., Herrmann, T., Tao, W., Benistant, F., See, A., Chu, S., Samudra, G.S. (2011-04). Mechanism of stress memorization technique (SMT) and method to maximize its effect. IEEE Electron Device Letters 32 (4) : 467-469. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2108634
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82675
dc.description.abstractA simple and unified fundamental theory on the mechanism of stress memorization technique (SMT) is presented for the first time. This theory is based on the difference in thermal properties of the materials involved in SMT process, i.e., silicon (channel), polysilicon (gate), amorphous silicon (source/drain), SiO2 (gate oxide), as well as Si3N 4 (SMT nitride stressor layer), which lead to deformations during thermal anneal and SMT. This theory accounts for all the results published to date in SMT and provides important physical insights. As a demonstration of predictive capability of this theory, a 45-nm process was modified using a novel anneal sequence which raises the stress in the channel. The experimental data after the change yield additional 5% performance boost for NFET compared to a baseline SMT process. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2011.2108634
dc.sourceScopus
dc.subjectLaser annealing (LSA)
dc.subjectstress
dc.subjectstress memorization technique (SMT)
dc.subjectTCAD
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2011.2108634
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue4
dc.description.page467-469
dc.description.codenEDLED
dc.identifier.isiut000288664800013
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

9
checked on Nov 27, 2020

WEB OF SCIENCETM
Citations

9
checked on Nov 20, 2020

Page view(s)

94
checked on Nov 23, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.