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|Title:||Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valves||Authors:||Leong, Z.Y.
|Issue Date:||Mar-2007||Citation:||Leong, Z.Y., Tan, S.G., Jalil, M.B.A., Kumar, S.B., Han, G.C. (2007-03). Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valves. Journal of Magnetism and Magnetic Materials 310 (2 SUPPL. PART 3) : e635-e637. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2006.10.679||Abstract:||We study the effects of the interfacial conductivity σi and spin asymmetry γ at the boundaries between the ferromagnetic (FM) and nonmagnetic layers of a current perpendicular-to-plane spin-valve trilayer, based on the semi-classical drift-diffusion model. We found that the expected increase in the MR ratio with decreasing σi occurs only for moderately low σi and γ larger than some critical value γc. For γ < γc, the competitive contribution to spin-dependent scattering in the FM layers leads to a reduction in MR with decreasing σi. For even lower σi values, our calculations predict a stronger suppression of MR, which applies even when γ exceeds γc. We attribute this MR suppression to the spin relaxation within the FM layers, since the effect disappears in the limit of infinite spin-relaxation length. Thus, for highly spin-asymmetric interfacial resistances (with γ > γc), there is an optimal conductivity σi which yields the maximum MR ratio. © 2006 Elsevier B.V. All rights reserved.||Source Title:||Journal of Magnetism and Magnetic Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/82661||ISSN:||03048853||DOI:||10.1016/j.jmmm.2006.10.679|
|Appears in Collections:||Staff Publications|
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