Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3666854
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dc.titleMagnetic field control of hysteretic switching in Co/Al 2O 3 multilayers by carrier injection
dc.contributor.authorKalitsov, A.
dc.contributor.authorSahadevan, A.M.
dc.contributor.authorJammalamadaka, S.N.
dc.contributor.authorKalon, G.
dc.contributor.authorBhatia, C.S.
dc.contributor.authorXiong, G.
dc.contributor.authorYang, H.
dc.date.accessioned2014-10-07T04:31:46Z
dc.date.available2014-10-07T04:31:46Z
dc.date.issued2011
dc.identifier.citationKalitsov, A., Sahadevan, A.M., Jammalamadaka, S.N., Kalon, G., Bhatia, C.S., Xiong, G., Yang, H. (2011). Magnetic field control of hysteretic switching in Co/Al 2O 3 multilayers by carrier injection. AIP Advances 1 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3666854
dc.identifier.issn21583226
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82641
dc.description.abstractWe propose a theoretical model of magnetic field dependence of hysteretic switching in magnetic granular system. The model is based on the self-trapped electrons mechanism. Our calculations show that the switching voltage may be significantly decreased with increasing the magnetic field. The underlying mechanism is the influence of the magnetic field on electron occupation of the conduction band, which depends on the materials used in magnetic granular system, concentration of magnetic granules in the insulating matrix, applied voltage, and the charge accumulation on the granules. We support our theoretical calculations by measuring the magnetic field dependence of resistive switching behaviour in Co/Al 2O 3 granular multilayers. Our experimental results are in qualitative agreement with the proposed theory. © 2011 Author(s).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3666854
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3666854
dc.description.sourcetitleAIP Advances
dc.description.volume1
dc.description.issue4
dc.description.page-
dc.identifier.isiut000302141100083
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