Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4795763
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dc.titleLow substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating
dc.contributor.authorYang, W.F.
dc.contributor.authorLiu, Z.G.
dc.contributor.authorWu, Z.Y.
dc.contributor.authorHong, M.H.
dc.contributor.authorWang, C.F.
dc.contributor.authorLee, A.Y.S.
dc.contributor.authorGong, H.
dc.date.accessioned2014-10-07T04:31:36Z
dc.date.available2014-10-07T04:31:36Z
dc.date.issued2013-03-18
dc.identifier.citationYang, W.F., Liu, Z.G., Wu, Z.Y., Hong, M.H., Wang, C.F., Lee, A.Y.S., Gong, H. (2013-03-18). Low substrate temperature fabrication of high-performance metal oxide thin-film by magnetron sputtering with target self-heating. Applied Physics Letters 102 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4795763
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82627
dc.description.abstractAl-doped ZnO (AZO) films with high transmittance and low resistivity were achieved on low temperature substrates by radio frequency magnetron sputtering using a high temperature target. By investigating the effect of target temperature (TG) on electrical and optical properties, the origin of electrical conduction is verified as the effect of the high TG, which enhances crystal quality that provides higher mobility of electrons as well as more effective activation for the Al dopants. The optical bandgap increases from 3.30 eV for insulating ZnO to 3.77 eV for conducting AZO grown at high T G, and is associated with conduction-band filling up to 1.13 eV due to the Burstein-Moss effect. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4795763
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.4795763
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue11
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000316544900026
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