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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.851238
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dc.titleLow noise RF MOSFETs on flexible plastic substrates
dc.contributor.authorKao, H.L.
dc.contributor.authorChin, A.
dc.contributor.authorHung, B.F.
dc.contributor.authorLee, C.F.
dc.contributor.authorLai, J.M.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYoo, W.J.
dc.contributor.authorChi, C.C.
dc.date.accessioned2014-10-07T04:31:36Z
dc.date.available2014-10-07T04:31:36Z
dc.date.issued2005-07
dc.identifier.citationKao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Yoo, W.J., Chi, C.C. (2005-07). Low noise RF MOSFETs on flexible plastic substrates. IEEE Electron Device Letters 26 (7) : 489-491. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.851238
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82626
dc.description.abstractWe report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (Lg = 80 nm) devices. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.851238
dc.sourceScopus
dc.subjectAssociated gain
dc.subjectMOSFET
dc.subjectPlastic
dc.subjectRF noise
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.851238
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue7
dc.description.page489-491
dc.description.codenEDLED
dc.identifier.isiut000230150400021
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