Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1667602
DC FieldValue
dc.titleInvestigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films
dc.contributor.authorFeng, W.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-10-07T04:31:04Z
dc.date.available2014-10-07T04:31:04Z
dc.date.issued2004-04-15
dc.identifier.citationFeng, W., Choi, W.K. (2004-04-15). Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films. Journal of Applied Physics 95 (8) : 4197-4203. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1667602
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82582
dc.description.abstractThe thermal effects on electrical properties of Si0.887Ge 0.113 and Si0.887-yGe 0.113Cy films were investigated at an oxidizing or inert ambient. The reduction in C content was observed while annealing Si0.887-yGe0.113Cy films at an oxidizing ambient. The films which were annealed in an inert ambient were found to have significant amount of SiC precipitates. The measurements from capacitance versus voltage and deep level transient spectroscopy determined interface state values.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1667602
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1667602
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume95
dc.description.issue8
dc.description.page4197-4203
dc.description.codenJAPIA
dc.identifier.isiut000220586100047
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