Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physe.2005.03.007
DC FieldValue
dc.titleInvestigation of optical properties of nanoporous GaN films
dc.contributor.authorVajpeyi, A.P.
dc.contributor.authorTripathy, S.
dc.contributor.authorChua, S.J.
dc.contributor.authorFitzgerald, E.A.
dc.date.accessioned2014-10-07T04:30:59Z
dc.date.available2014-10-07T04:30:59Z
dc.date.issued2005-07
dc.identifier.citationVajpeyi, A.P., Tripathy, S., Chua, S.J., Fitzgerald, E.A. (2005-07). Investigation of optical properties of nanoporous GaN films. Physica E: Low-Dimensional Systems and Nanostructures 28 (2) : 141-149. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2005.03.007
dc.identifier.issn13869477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82575
dc.description.abstractIn this study, we have investigated the optical properties of nanoporous GaN films on sapphire (0 0 0 1) prepared by UV-assisted electrochemical and electroless etching. Using various etching conditions, we can control the average pore size, pore depth and the density of pores on the GaN surface. Scanning electron microscopy (SEM) measurements reveal the nature of the pore morphology and microstructures. Optical properties of these nanoporous films have been studied using micro-photoluminescence and micro-Raman scattering. As compared to the as-grown GaN films, nanoporous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The red shifted E 2 phonon peak in the Raman spectra of the porous GaN films further confirms such a stress relaxation. Microscopic optical measurements also suggest that light extraction from porous GaN surface is enhanced by such nanopatterning. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.physe.2005.03.007
dc.sourceScopus
dc.subjectNanoporous GaN
dc.subjectPhotoluminescence
dc.subjectRaman scattering
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.physe.2005.03.007
dc.description.sourcetitlePhysica E: Low-Dimensional Systems and Nanostructures
dc.description.volume28
dc.description.issue2
dc.description.page141-149
dc.description.codenPELNF
dc.identifier.isiut000230158200006
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