Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001766
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dc.titleInversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
dc.contributor.authorLin, J.Q.
dc.contributor.authorLee, S.J.
dc.contributor.authorOh, H.J.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.contributor.authorChi, D.Z.
dc.date.accessioned2014-10-07T04:30:53Z
dc.date.available2014-10-07T04:30:53Z
dc.date.issued2008
dc.identifier.citationLin, J.Q., Lee, S.J., Oh, H.J., Lo, G.Q., Kwong, D.L., Chi, D.Z. (2008). Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate. IEEE Electron Device Letters 29 (9) : 977-980. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001766
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82566
dc.description.abstractA high-performance In0.53Ga0.47As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH4)2S treatment, the chemical vapor deposition HfAlO growth on In0.53Ga0.47As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 × 10-7A/cm2 at Vg of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600 °C for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In0.53Ga0.47As nMOSFET shows well-performed Id-Vd and Id-Vg characteristics. The record high peak electron mobility of 1560 cm2Vs has been achieved without any correction methods considering interface charge and parasitic resistance. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2001766
dc.sourceScopus
dc.subjectDopant activation
dc.subjectInGaAs
dc.subjectMOSFETs
dc.subjectSelf-aligned
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2001766
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue9
dc.description.page977-980
dc.description.codenEDLED
dc.identifier.isiut000259573400003
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