Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3690113
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dc.titleInterplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films
dc.contributor.authorRoy Barman, A.
dc.contributor.authorAnnadi, A.
dc.contributor.authorGopinadhan, K.
dc.contributor.authorLú, W.M.
dc.contributor.authorAriando
dc.contributor.authorDhar, S.
dc.contributor.authorVenkatesan, T.
dc.date.accessioned2014-10-07T04:30:52Z
dc.date.available2014-10-07T04:30:52Z
dc.date.issued2012
dc.identifier.citationRoy Barman, A., Annadi, A., Gopinadhan, K., Lú, W.M., Ariando, Dhar, S., Venkatesan, T. (2012). Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films. AIP Advances 2 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690113
dc.identifier.issn21583226
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82564
dc.description.abstractThin films of Ta incorporated TiO2 grown by pulsed laser deposition under specific growth conditions show room temperature ferromagnetism. Ta introduces carriers and concomitantly cationic defects, the combination of which leads to ferromagnetism. In this paper, we report on the dependence of the carrier and cationic defect density (compensation) on various parameters such as oxygen growth pressure, temperature and Ta concentration. Most likely, the Ti vacancies act as magnetic centers and the free electrons help with the exchange leading to ferromagnetism via Ruderman-Kittel-Kasuya- Yosida mechanism. Copyright 2012 Author(s).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3690113
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3690113
dc.description.sourcetitleAIP Advances
dc.description.volume2
dc.description.issue1
dc.description.page-
dc.identifier.isiut000302225400066
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