Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1561995
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dc.titleInterfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms
dc.contributor.authorChim, W.K.
dc.contributor.authorNg, T.H.
dc.contributor.authorKoh, B.H.
dc.contributor.authorChoi, W.K.
dc.contributor.authorZheng, J.X.
dc.contributor.authorTung, C.H.
dc.contributor.authorDu, A.Y.
dc.date.accessioned2014-10-07T04:30:49Z
dc.date.available2014-10-07T04:30:49Z
dc.date.issued2003-04-15
dc.identifier.citationChim, W.K., Ng, T.H., Koh, B.H., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y. (2003-04-15). Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms. Journal of Applied Physics 93 (8) : 4788-4793. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1561995
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82560
dc.description.abstractThe interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechansims were studied. The electric field in the interfacial layer was found to be larger with respect to the electric field in the bulk ZrO2. The results showed the dependence of injecting field at the cathode on the electric field in the interfacial layer of the materials.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1561995
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1561995
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue8
dc.description.page4788-4793
dc.description.codenJAPIA
dc.identifier.isiut000181863100065
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