Please use this identifier to cite or link to this item:
|Title:||Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness||Authors:||Xie, R.
High-κ gate dielectrics
Metal-oxide semiconductor field effect transistor (MOSFET)
|Issue Date:||2009||Citation:||Xie, R., Phung, T.H., He, W., Yu, M., Zhu, C. (2009). Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness. IEEE Transactions on Electron Devices 56 (6) : 1330-1337. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019420||Abstract:||High-κ/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective pregate surface GeO2 passivation and postgate dielectric (postgate) treatment incorporating fluorine (F) into a high-κ/Ge gate stack. Capacitance-voltage (C-V) characteristics are significantly improved with minimum density of interface states (Dit of 2 × 1011 cm-2 · eV-1 for Ge MOS capacitors. A hole mobility up to 396 cm2/V · s is achieved for Ge p-metal-oxide-semiconductor field-effect transistors (pMOSFETs) with equivalent oxide thickness that is ∼10 Å and gate leakage current density that is less than 10-3A/cm2 at Vt ± 1 V. A high drain current of 37.8 μA/μm at Vg - Vt= Vd = -1.2 V is presented for a channel length of 10 μm. The Ge MOSFET interface properties are further investigated using the variable-rise-and-fall-time charge-pumping method. Over three times Dit reduction in both upper and lower halves of the Ge bandgap is observed with F incorporation, which is consistent with the observation that frequency-dependent flat voltage shift is much less for samples with F incorporation in the C-V characteristics of Ge MOS capacitors. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82559||ISSN:||00189383||DOI:||10.1109/TED.2009.2019420|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 4, 2022
WEB OF SCIENCETM
checked on Jul 4, 2022
checked on Jun 23, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.