Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2019420
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dc.titleInterface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness
dc.contributor.authorXie, R.
dc.contributor.authorPhung, T.H.
dc.contributor.authorHe, W.
dc.contributor.authorYu, M.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:30:48Z
dc.date.available2014-10-07T04:30:48Z
dc.date.issued2009
dc.identifier.citationXie, R., Phung, T.H., He, W., Yu, M., Zhu, C. (2009). Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness. IEEE Transactions on Electron Devices 56 (6) : 1330-1337. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019420
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82559
dc.description.abstractHigh-κ/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective pregate surface GeO2 passivation and postgate dielectric (postgate) treatment incorporating fluorine (F) into a high-κ/Ge gate stack. Capacitance-voltage (C-V) characteristics are significantly improved with minimum density of interface states (Dit of 2 × 1011 cm-2 · eV-1 for Ge MOS capacitors. A hole mobility up to 396 cm2/V · s is achieved for Ge p-metal-oxide-semiconductor field-effect transistors (pMOSFETs) with equivalent oxide thickness that is ∼10 Å and gate leakage current density that is less than 10-3A/cm2 at Vt ± 1 V. A high drain current of 37.8 μA/μm at Vg - Vt= Vd = -1.2 V is presented for a channel length of 10 μm. The Ge MOSFET interface properties are further investigated using the variable-rise-and-fall-time charge-pumping method. Over three times Dit reduction in both upper and lower halves of the Ge bandgap is observed with F incorporation, which is consistent with the observation that frequency-dependent flat voltage shift is much less for samples with F incorporation in the C-V characteristics of Ge MOS capacitors. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2019420
dc.sourceScopus
dc.subjectFluorine (F)
dc.subjectGermanium (Ge)
dc.subjectHfO2
dc.subjectHigh-κ gate dielectrics
dc.subjectInterface traps
dc.subjectMetal-oxide semiconductor field effect transistor (MOSFET)
dc.subjectMOS devices
dc.subjectPassivation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2009.2019420
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue6
dc.description.page1330-1337
dc.description.codenIETDA
dc.identifier.isiut000266330200021
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