Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2009.2019420
DC Field | Value | |
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dc.title | Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness | |
dc.contributor.author | Xie, R. | |
dc.contributor.author | Phung, T.H. | |
dc.contributor.author | He, W. | |
dc.contributor.author | Yu, M. | |
dc.contributor.author | Zhu, C. | |
dc.date.accessioned | 2014-10-07T04:30:48Z | |
dc.date.available | 2014-10-07T04:30:48Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Xie, R., Phung, T.H., He, W., Yu, M., Zhu, C. (2009). Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thickness. IEEE Transactions on Electron Devices 56 (6) : 1330-1337. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019420 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82559 | |
dc.description.abstract | High-κ/germanium (Ge) interfaces are significantly improved through a new interface engineering scheme of using both effective pregate surface GeO2 passivation and postgate dielectric (postgate) treatment incorporating fluorine (F) into a high-κ/Ge gate stack. Capacitance-voltage (C-V) characteristics are significantly improved with minimum density of interface states (Dit of 2 × 1011 cm-2 · eV-1 for Ge MOS capacitors. A hole mobility up to 396 cm2/V · s is achieved for Ge p-metal-oxide-semiconductor field-effect transistors (pMOSFETs) with equivalent oxide thickness that is ∼10 Å and gate leakage current density that is less than 10-3A/cm2 at Vt ± 1 V. A high drain current of 37.8 μA/μm at Vg - Vt= Vd = -1.2 V is presented for a channel length of 10 μm. The Ge MOSFET interface properties are further investigated using the variable-rise-and-fall-time charge-pumping method. Over three times Dit reduction in both upper and lower halves of the Ge bandgap is observed with F incorporation, which is consistent with the observation that frequency-dependent flat voltage shift is much less for samples with F incorporation in the C-V characteristics of Ge MOS capacitors. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2019420 | |
dc.source | Scopus | |
dc.subject | Fluorine (F) | |
dc.subject | Germanium (Ge) | |
dc.subject | HfO2 | |
dc.subject | High-κ gate dielectrics | |
dc.subject | Interface traps | |
dc.subject | Metal-oxide semiconductor field effect transistor (MOSFET) | |
dc.subject | MOS devices | |
dc.subject | Passivation | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2009.2019420 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 56 | |
dc.description.issue | 6 | |
dc.description.page | 1330-1337 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000266330200021 | |
Appears in Collections: | Staff Publications |
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