Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/37/19/016
DC FieldValue
dc.titleInterface properties of iron oxide films
dc.contributor.authorJain, S.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorChan, S.Y.
dc.contributor.authorBoothroyd, C.B.
dc.date.accessioned2014-10-07T04:30:46Z
dc.date.available2014-10-07T04:30:46Z
dc.date.issued2004-10-07
dc.identifier.citationJain, S., Adeyeye, A.O., Chan, S.Y., Boothroyd, C.B. (2004-10-07). Interface properties of iron oxide films. Journal of Physics D: Applied Physics 37 (19) : 2720-2725. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/37/19/016
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82556
dc.description.abstractWe have investigated in a systematic way the interface properties of Fe2O3 grown on different buffer layers using an electron beam deposition technique. For films deposited directly onto Si(001) substrate and on Al buffer layer, we observed the presence of metallic Fe at the Si(001) and Al interfaces, respectively. We also detected the presence of SiO 2 and Al2O3 by x-ray photoelectron spectroscopy. For Fe2O3 films deposited on Cu buffer layer, however, no other phases were observed at the interface. We explain our results using the enthalpy of formation. The enthalpy of formation of SiO 2 and Al2O3 is much lower than that of Fe 2O3, thus inhibiting the crystalline growth of Fe 2O3 at the interface. The enthalpy of formation of CuO is, however, greater than that of Fe2O3, and thus promoting the growth of Fe2O3 to be crystalline. These results were corroborated by our transmission electron microscopy studies.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0022-3727/37/19/016
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume37
dc.description.issue19
dc.description.page2720-2725
dc.description.codenJPAPB
dc.identifier.isiut000224669500018
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