Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1540224
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dc.titleInterface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates
dc.contributor.authorSamanta, S.K.
dc.contributor.authorChatterjee, S.
dc.contributor.authorMaikap, S.
dc.contributor.authorBera, L.K.
dc.contributor.authorBanerjee, H.D.
dc.contributor.authorMaiti, C.K.
dc.date.accessioned2014-10-07T04:30:45Z
dc.date.available2014-10-07T04:30:45Z
dc.date.issued2003-03-01
dc.identifier.citationSamanta, S.K., Chatterjee, S., Maikap, S., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-03-01). Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates. Journal of Applied Physics 93 (5) : 2464-2471. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1540224
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82555
dc.description.abstractThe study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N2O ambient and annealed in N2 had excellent electrical properties.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1540224
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1540224
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue5
dc.description.page2464-2471
dc.description.codenJAPIA
dc.identifier.isiut000181307000022
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