Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2019254
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dc.titleIntegration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
dc.contributor.authorFu, J.
dc.contributor.authorSingh, N.
dc.contributor.authorZhu, C.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:30:42Z
dc.date.available2014-10-07T04:30:42Z
dc.date.issued2009
dc.identifier.citationFu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L. (2009). Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory. IEEE Electron Device Letters 30 (6) : 662-664. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2019254
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82550
dc.description.abstractThis letter, for the first time, presents a metal high-κhigh-κ-oxide silicon-type charge-trapping nonvolatile memory fabricated on an advanced gate-all-around nanowire architecture with a top-down process. The high-κ materials are integrated with a high work-function TaN gate electrode. The fabricated Si nanowire TaN/ Al2O3/HfO2/SiO2/Si (TAHOS) memory can achieve a higher speed at a lower voltage compared with a similar wire-based SONOS device. For instance, at a 13-V programming pulse, the TAHOS memory device resulted in a Vth shift of 3.8 V in 10 μs, while the SONOS took a period of 1 ms to produce a similar shift. Faster program-and-erase speed, particularly the much improved erasing speed in the TAHOS device, could be ascribed to the enhanced electric-field drop in the tunnel oxide in addition to the suppressed gate-electron injection. In addition, good memory-reliability properties could also be observed in the nanowire TAHOS charge-trapping memory. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2019254
dc.sourceScopus
dc.subjectGate-all-around (GAA)
dc.subjectHigh-κ
dc.subjectNanowire
dc.subjectNonvolatile memory
dc.subjectTaN/Al2O3/HfO2/SiO2/Si (TAHOS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2019254
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue6
dc.description.page662-664
dc.description.codenEDLED
dc.identifier.isiut000266409200026
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