Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200700086
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dc.titleInjection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction rates
dc.contributor.authorChia, P.-J.
dc.contributor.authorChua, L.-L.
dc.contributor.authorSivaramakrishnan, S.
dc.contributor.authorZhuo, J.-M.
dc.contributor.authorZhao, L.-H.
dc.contributor.authorSim, W.-S.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorHo, P.K.-H.
dc.date.accessioned2014-10-07T04:30:37Z
dc.date.available2014-10-07T04:30:37Z
dc.date.issued2007-12-03
dc.identifier.citationChia, P.-J., Chua, L.-L., Sivaramakrishnan, S., Zhuo, J.-M., Zhao, L.-H., Sim, W.-S., Yeo, Y.-C., Ho, P.K.-H. (2007-12-03). Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction rates. Advanced Materials 19 (23) : 4202-4207. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200700086
dc.identifier.issn09359648
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82543
dc.description.abstractInjection-induced De-doping in a conducting polymer, poly(3,4- ethylenedioxythiophene) (PEDT) poly(styrenesulfonic acid)(PSSH) during device operation was reported. PEDT:PSSH is strongly acidic on account of the excess PSSH, and often contaminated with ions leftover from the oxidation reaction. The hole extraction PEDT+ → PEDT0 + h+ at the negative contact occurs more readily than hole injection from the opposite contact, which builds up a transient population of PEDT+ of a lower oxidation state across the electrode gap. Electrochemistry occurs in PEDT:PSS to give gas evolution and film spalling. The value across a lateral Au electrode gap was mapped using the Raman spectroscopy to determine whether the doping level of PEDT is permanently altered. The de-doping was confirmed by Fourier Transform Infrared Spectroscopy, which shows loss of the doping-induced infrared modes.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adma.200700086
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/adma.200700086
dc.description.sourcetitleAdvanced Materials
dc.description.volume19
dc.description.issue23
dc.description.page4202-4207
dc.description.codenADVME
dc.identifier.isiut000251910100015
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