Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1628814
DC FieldValue
dc.titleInfluence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion
dc.contributor.authorTan, C.F.
dc.contributor.authorChor, E.F.
dc.contributor.authorLiu, J.
dc.contributor.authorLee, H.
dc.contributor.authorQuek, E.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-07T04:30:34Z
dc.date.available2014-10-07T04:30:34Z
dc.date.issued2003-11-17
dc.identifier.citationTan, C.F., Chor, E.F., Liu, J., Lee, H., Quek, E., Chan, L. (2003-11-17). Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion. Applied Physics Letters 83 (20) : 4169-4171. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1628814
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82539
dc.description.abstractThe effectiveness in preventing clustering of silicon interstitials was explored using substitutional carbon by growing a thin layer of Si1-yCy epitaxy at the indium end-of-range (EOR) region. The aim was to eliminate the secondary EOR defects as well as to suppress the interstitially enhanced indium TED effect. The advantage of employing the epitaxial method instead of implantation in incorporating carbon into silicon was that they were effectively substitutional, which were the required carbon species for silicon interstitial sink mechanism.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1628814
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1628814
dc.description.sourcetitleApplied Physics Letters
dc.description.volume83
dc.description.issue20
dc.description.page4169-4171
dc.description.codenAPPLA
dc.identifier.isiut000186523400030
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