Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

Abstract

This letter reports the electrical characteristics of 1.5 μm RuO x-gate AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 - 900°C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800°C. The maximum gm and IDSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700°C. The ON-OFF current ratio of > 107 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800°C showcase the crystalline quality of AlxGa 1-xN/GaN HEMT structure with good electrical contacts.©2013 The Electrochemical Society.