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dc.titleInfluence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon
dc.contributor.authorKyaw, L.M.
dc.contributor.authorDolmanan, S.B.
dc.contributor.authorBera, M.K.
dc.contributor.authorLiu, Y.
dc.contributor.authorTan, H.R.
dc.contributor.authorBhat, T.N.
dc.contributor.authorDikme, Y.
dc.contributor.authorChor, E.F.
dc.contributor.authorTripathy, S.
dc.identifier.citationKyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S. (2014). Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon. ECS Solid State Letters 3 (2) : Q5-Q8. ScholarBank@NUS Repository.
dc.description.abstractThis letter reports the electrical characteristics of 1.5 μm RuO x-gate AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 - 900°C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800°C. The maximum gm and IDSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700°C. The ON-OFF current ratio of > 107 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800°C showcase the crystalline quality of AlxGa 1-xN/GaN HEMT structure with good electrical contacts.©2013 The Electrochemical Society.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleECS Solid State Letters
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