Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2004.839114
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dc.titleImprovements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric
dc.contributor.authorYu, X.
dc.contributor.authorZhu, C.
dc.contributor.authorYu, M.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:30:15Z
dc.date.available2014-10-07T04:30:15Z
dc.date.issued2004-12
dc.identifier.citationYu, X., Zhu, C., Yu, M., Kwong, D.-L. (2004-12). Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectric. IEEE Transactions on Electron Devices 51 (12) : 2154-2160. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.839114
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82512
dc.description.abstractPhysical and electrical characteristics of HfTaO gate dielectric have been systematically investigated for the first time. Based on the X-ray diffraction spectra and high-resolution transmission electron microscope pictures, the crystallization temperature of HfO2 film is significantly increased with incorporating Ta, and the HfTaO with 43% Ta film remains amorphous after annealing at 950 °C for 30 s. X-ray photoelectron spectroscopy results show that the formation of Si-O bonds in interfacial layer is increased with Ta concentration. The high atomic percentage of Si-O bonds may result in the HfTaO-Si interface inclining to SiO2-Si interface, as well as good interface properties. Hence, the interface states density (Olt) in HfTaO film is reduced by one order of magnitude compared with HfOa. In addition, charge trapping induced threshold voltage (Vth) instability in HfO 2 and HfTaO films is compared using a pulsed I d-Vg measurement technique, and the V th shift in HfTaO film is much lower than HfO 2. This indicates that charge trapping in HfO 2 film is significantly suppressed by incorporating Ta. Since both of the interface traps and charged traps in HfTaO film are less than in HfO2, more than twice higher peak mobility is achieved in HfTaO nMOSFETs, which is due to the suppression of Coulomb scattering caused by the interface traps and charged traps. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2004.839114
dc.sourceScopus
dc.subjectCrystallization temperature
dc.subjectElectrical stability
dc.subjectHfO2
dc.subjectHfTaO
dc.subjectHigh-K
dc.subjectInterface states density (Dit)
dc.subjectMobility
dc.subjectMOSFET
dc.subjectVth shift
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2004.839114
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume51
dc.description.issue12
dc.description.page2154-2160
dc.description.codenIETDA
dc.identifier.isiut000225362900028
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