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|Title:||Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy||Authors:||Miao, Z.L.
A1. Surface structure
A3. Molecular beamepitaxy
B2. Semiconducting III-V materials
|Issue Date:||15-Mar-2005||Citation:||Miao, Z.L., Chua, S.J., Chye, Y.H., Chen, P., Tripathy, S. (2005-03-15). Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy. Journal of Crystal Growth 276 (1-2) : 72-76. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.11.347||Abstract:||Uniform InAs quantum dots (QDs) with high density up to 1.16×10 11 cm -2 were grown by molecular beam epitaxy by precisely controlling the growth rate of InAs QDs and using periodical micro-disturbance (PMD) technique. A method to precisely measure InAs QDs growth rate is developed with the assistance of in situ reflective high-energy electron diffraction. The PMD technique is proposed to function as a "filter" to prevent big QDs formation, while maintaining the uniformity and high density of the QDs. Enhanced intensity and narrow linewidth of the photoluminescence from the InAs QDs grown on the PMD layer are attributed to the high density and uniformity of the QDs. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Journal of Crystal Growth||URI:||http://scholarbank.nus.edu.sg/handle/10635/82509||ISSN:||00220248||DOI:||10.1016/j.jcrysgro.2004.11.347|
|Appears in Collections:||Staff Publications|
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