Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.845496
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dc.titleImproved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
dc.contributor.authorKang, F.J.
dc.contributor.authorYu, H.Y.
dc.contributor.authorRen, C.
dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorSa, N.
dc.contributor.authorYang, H.
dc.contributor.authorLiu, X.Y.
dc.contributor.authorHan, R.Q.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:30:10Z
dc.date.available2014-10-07T04:30:10Z
dc.date.issued2005-04
dc.identifier.citationKang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L. (2005-04). Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process. IEEE Electron Device Letters 26 (4) : 237-239. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.845496
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82504
dc.description.abstractBy using a high-temperature gate-first process, HfN-HfO2-gated nMOSFET with 0.95-nm equivalent oxide thickness (EOT) was fabricated. The excellent device characteristics such as the sub-l-nm EOT, high electron effective mobility (peak value ∼ 232 cm2/V. s) and robust electrical stability under a positive constant voltage stress were achieved. These improved device performances achieved in the sub-l-nm HfN-HfO2-gated nMOSFETs could be attributed to the low interfacial and bulk traps charge density of HfO2 layer due to the 950 °C high-temperature source/ drain activation annealing process after deposition of the HfN-HfO2 gate stack. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.845496
dc.sourceScopus
dc.subjectHfO2 gate dielectric
dc.subjectInstability of Vth
dc.subjectMobility
dc.subjectnMOS transistor
dc.subjectSub-1-nm equivalent oxide thickness (EOT)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.845496
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue4
dc.description.page237-239
dc.description.codenEDLED
dc.identifier.isiut000227870600005
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