Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2167650
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dc.titleImpact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant
dc.contributor.authorTong, Y.
dc.contributor.authorZhou, Q.
dc.contributor.authorChua, L.H.
dc.contributor.authorThanigaivelan, T.
dc.contributor.authorHenry, T.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:30:04Z
dc.date.available2014-10-07T04:30:04Z
dc.date.issued2011-12
dc.identifier.citationTong, Y., Zhou, Q., Chua, L.H., Thanigaivelan, T., Henry, T., Yeo, Y.-C. (2011-12). Impact of a germanium and carbon preamorphization implant on the electrical characteristics of NiSi/Si contacts with a presilicide sulfur implant. IEEE Electron Device Letters 32 (12) : 1734-1736. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2167650
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82495
dc.description.abstractThis letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts. Ge and C PAI increases the threshold temperature for agglomeration of a NiSi film, thus enhancing its thermal stability. A presilicide S implant and its segregation at metal/semiconductor interface effectively lowers the effective electron SBH {B}n to 0.18 eV. In addition, the distribution of reverse current in the NiSi/n-type Si contact is improved with the introduction of Ge and C PAI. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2011.2167650
dc.sourceScopus
dc.subjectCarbon
dc.subjectGermanium
dc.subjectIon implantation
dc.subjectSchottky diodes
dc.subjectSilicides
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2011.2167650
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue12
dc.description.page1734-1736
dc.description.codenEDLED
dc.identifier.isiut000297352500029
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