Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2091672
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dc.titleIII-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
dc.contributor.authorChin, H.-C.
dc.contributor.authorGong, X.
dc.contributor.authorWang, L.
dc.contributor.authorLee, H.K.
dc.contributor.authorShi, L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:30:00Z
dc.date.available2014-10-07T04:30:00Z
dc.date.issued2011-02
dc.identifier.citationChin, H.-C., Gong, X., Wang, L., Lee, H.K., Shi, L., Yeo, Y.-C. (2011-02). III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin. IEEE Electron Device Letters 32 (2) : 146-148. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2091672
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82490
dc.description.abstractWe report an In0.7Ga0.3As n-channel multiplegate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga 0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 μA/ìm at VDS = 1.5 V and VGS . VT = 3 V. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2010.2091672
dc.sourceScopus
dc.subjectFinFET
dc.subjecthigh mobility
dc.subjectInGaAs
dc.subjectMOSFET
dc.subjectmultiple-gate field-effect transistor (MuGFET)
dc.subjectretrograde well
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2010.2091672
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue2
dc.description.page146-148
dc.description.codenEDLED
dc.identifier.isiut000286677700012
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