Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.922854
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dc.titleHot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer
dc.contributor.authorZhang, G.
dc.contributor.authorYoo, W.J.
dc.contributor.authorLing, C.-H.
dc.date.accessioned2014-10-07T04:29:51Z
dc.date.available2014-10-07T04:29:51Z
dc.date.issued2008-06
dc.identifier.citationZhang, G., Yoo, W.J., Ling, C.-H. (2008-06). Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer. IEEE Transactions on Electron Devices 55 (6) : 1502-1510. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.922854
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82476
dc.description.abstractIn this paper, electron-energy- and lattice-temperature-dependent hot-electron-capture properties have been investigated for polysilicon-oxide-nitride-oxide-silicon-type Flash memories using a Si3N4 and high-dielectric-constant (k) ZrO2/HfO2 charge trapping layer when channel hot-electron injection is applied for programming. Hot-electron-capture rate is extracted by using an electrical method for various devices, and its lattice-temperature dependence indicates that inelastic phonon scattering may be the dominant mechanism of hot-electron relaxation. Memory device using a ZrO2 charge trapping layer shows enhanced electron capture from extended SixZr1-x) O2 interface of ∼2 nm due to more sufficient scattering, and the programming speed of ZrO2 device is enhanced as compared to HfO2 by × 2.2 times and by ∼3.2 times. Capabilities of low-voltage operation and improved endurance property are also demonstrated for ZrO2 device as compared to the other contending NOR -type devices. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2008.922854
dc.sourceScopus
dc.subjectChannel hot-electron injection (CHEI)
dc.subjectHigh-κ
dc.subjectHot-electron capture
dc.subjectPolysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2008.922854
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume55
dc.description.issue6
dc.description.page1502-1510
dc.description.codenIETDA
dc.identifier.isiut000256155600030
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