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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.851241
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dc.titleHigh-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications
dc.contributor.authorChiang, K.C.
dc.contributor.authorHuang, C.C.
dc.contributor.authorChin, A.
dc.contributor.authorChen, W.J.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorChiu, H.F.
dc.contributor.authorChen, J.-R.
dc.contributor.authorChi, C.C.
dc.date.accessioned2014-10-07T04:29:48Z
dc.date.available2014-10-07T04:29:48Z
dc.date.issued2005-07
dc.identifier.citationChiang, K.C., Huang, C.C., Chin, A., Chen, W.J., McAlister, S.P., Chiu, H.F., Chen, J.-R., Chi, C.C. (2005-07). High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications. IEEE Electron Device Letters 26 (7) : 504-506. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.851241
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82472
dc.description.abstractWe have developed novel high-K Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm2), small leakage current at 2 V (1.2 × 10-8 A/cm2), and low voltage linearity of the capacitance (89 ppm/V2). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.851241
dc.sourceScopus
dc.subjectAnalog
dc.subjectIr
dc.subjectITRS
dc.subjectMIM
dc.subjectTiTaO
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.851241
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue7
dc.description.page504-506
dc.description.codenEDLED
dc.identifier.isiut000230150400026
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