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|Title:||High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications||Authors:||Chiang, K.C.
|Issue Date:||Jul-2005||Citation:||Chiang, K.C., Huang, C.C., Chin, A., Chen, W.J., McAlister, S.P., Chiu, H.F., Chen, J.-R., Chi, C.C. (2005-07). High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications. IEEE Electron Device Letters 26 (7) : 504-506. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.851241||Abstract:||We have developed novel high-K Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm2), small leakage current at 2 V (1.2 × 10-8 A/cm2), and low voltage linearity of the capacitance (89 ppm/V2). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82472||ISSN:||07413106||DOI:||10.1109/LED.2005.851241|
|Appears in Collections:||Staff Publications|
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